All IGBT. G12N50C1D Datasheet

 

G12N50C1D IGBT. Datasheet pdf. Equivalent

Type Designator: G12N50C1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO218

G12N50C1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

G12N50C1D Datasheet (PDF)

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Datasheet: G10N50 , G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , GT30J322 , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 .

 


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