All IGBT. DG15X06T1 Datasheet

 

DG15X06T1 IGBT. Datasheet pdf. Equivalent


   Type Designator: DG15X06T1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 27 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 9 nS
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO220

 DG15X06T1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DG15X06T1 Datasheet (PDF)

 ..1. Size:339K  cn starpower
 dg15x06t1.pdf

DG15X06T1 DG15X06T1

DG15X06T1 IGBT Discrete DOSEMI IGBT DG15X06T1 600V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC

 9.1. Size:532K  cn starpower
 dg15x12t2.pdf

DG15X06T1 DG15X06T1

DG15X12T2 IGBT Discrete DOSEMI IGBT DG15X12T2 1200V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

Datasheet: VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , IRGP4066D , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P .

 

 
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