IXGR40N60B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR40N60B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 167 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 210 pF
Paquete / Cubierta: ISOPLUS247
- Selección de transistores por parámetros
IXGR40N60B2 Datasheet (PDF)
ixgr40n60b2.pdf
VCES = 600 VIXGR 40N60B2HiPerFASTTM IGBTIXGR 40N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 1.9 VC2-Class High Speed IGBTstfi typ = 82 ns(Electrically Isolated Back Surface)Optimized for 10-25 KHz hard switchingand up to 150 KHz resonant switchingPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432VCES TJ = 25C to 150C 600 VV
ixgr40n60b2d1.pdf
VCES = 600 VIXGR 40N60B2HiPerFASTTM IGBTIXGR 40N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 1.9 VC2-Class High Speed IGBTstfi typ = 82 ns(Electrically Isolated Back Surface)Optimized for 10-25 KHz hard switchingand up to 150 KHz resonant switchingPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432VCES TJ = 25C to 150C 600 VV
ixgr40n60b.pdf
VCES = 600 VIXGR 40N60BHiPerFASTTM IGBTIC25 = 70 AIXGR 40N60BD1ISOPLUS247TMVCE(sat) = 2.1 V(Electrically Isolated Backside)tfi(typ) = 180 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 70 A CE Isolated Backsi
ixgr40n60bd1.pdf
VCES = 600 VIXGR 40N60BHiPerFASTTM IGBTIC25 = 70 AIXGR 40N60BD1ISOPLUS247TMVCE(sat) = 2.1 V(Electrically Isolated Backside)tfi(typ) = 180 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 70 A CE Isolated Backsi
Otros transistores... IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXRH40N120 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 .
History: MUBW25-06A6K | FD600R17KF6C_B2 | APTGF150A120T | MMG100J060U | DIM800DCS12-A | MMG200D170B | IRGP4620DPBF
History: MUBW25-06A6K | FD600R17KF6C_B2 | APTGF150A120T | MMG100J060U | DIM800DCS12-A | MMG200D170B | IRGP4620DPBF
Liste
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