IXGR40N60B2 Specs and Replacement

Type Designator: IXGR40N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 167 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: ISOPLUS247

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IXGR40N60B2 datasheet

 ..1. Size:499K  ixys
 ixgr40n60b2.pdf pdf_icon

IXGR40N60B2

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 600 V V... See More ⇒

 0.1. Size:499K  ixys
 ixgr40n60b2d1.pdf pdf_icon

IXGR40N60B2

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 600 V V... See More ⇒

 4.1. Size:53K  ixys
 ixgr40n60b.pdf pdf_icon

IXGR40N60B2

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25 C to 150 C 600 V E153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 70 A C E Isolated Backsi... See More ⇒

 4.2. Size:53K  ixys
 ixgr40n60bd1.pdf pdf_icon

IXGR40N60B2

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25 C to 150 C 600 V E153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 70 A C E Isolated Backsi... See More ⇒

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Specs: IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1, IXGR35N120C, IXGR39N60B, IXGR39N60BD1, IXGR40N60B, STGW60V60DF, IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1, IXGR40N60CD1, IXGR48N60B3, IXGR48N60B3D1, IXGR48N60C3D1

Keywords - IXGR40N60B2 transistor spec

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