IXGR72N60B3D1 Todos los transistores

 

IXGR72N60B3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR72N60B3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 33 nS
   Coesⓘ - Capacitancia de salida, typ: 575 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR72N60B3D1 Datasheet (PDF)

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IXGR72N60B3D1

Preliminary Technical InformationGenX3TM B3-Class VCES = 600VIXGR72N60B3D1IGBT w/Diode IC110 = 40AVCE(sat) 1.80V(Electrically Isolated Back Surface)tfi(typ) = 90nsMedium Speed Low Vsat PT IGBTsfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES

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IXGR72N60B3D1

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60B3H1IC110 = 40A(Electrically Isolated Back Surface)VCE(sat) 1.80Vtfi(typ) = 92nsMedium Speed Low Vsat PT IGBTfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continu

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IXGR72N60B3D1

TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25

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IXGR72N60B3D1

VCES = 600VGenX3TM 600V IGBTIXGR72N60A3IC110 = 52AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingtfi(typ) = 250nsSymbol Test Conditions Maximum RatingsISOPLUS247TM (IXGR)VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 52 AGICM TC

MOSTRAR MÁS

Otros transistores... IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 , IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , MBQ60T65PES , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 .

History: STGB19NC60HDT4 | MMG200DR120B | IXGT30N60C3D1 | IRGP4068DPBF | MGB15N35CLT4 | DL2G50SH6N | SKM300GAR123D

 

 
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