All IGBT. IXGR72N60B3D1 Datasheet

 

IXGR72N60B3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR72N60B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 575 pF
   Qgⓘ - Total Gate Charge, typ: 225 nC
   Package: ISOPLUS247

 IXGR72N60B3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR72N60B3D1 Datasheet (PDF)

 ..1. Size:210K  ixys
 ixgr72n60b3d1.pdf

IXGR72N60B3D1 IXGR72N60B3D1

Preliminary Technical InformationGenX3TM B3-Class VCES = 600VIXGR72N60B3D1IGBT w/Diode IC110 = 40AVCE(sat) 1.80V(Electrically Isolated Back Surface)tfi(typ) = 90nsMedium Speed Low Vsat PT IGBTsfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES

 3.1. Size:219K  ixys
 ixgr72n60b3h1.pdf

IXGR72N60B3D1 IXGR72N60B3D1

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60B3H1IC110 = 40A(Electrically Isolated Back Surface)VCE(sat) 1.80Vtfi(typ) = 92nsMedium Speed Low Vsat PT IGBTfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continu

 5.1. Size:211K  ixys
 ixgr72n60c3d1.pdf

IXGR72N60B3D1 IXGR72N60B3D1

TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25

 5.2. Size:183K  ixys
 ixgr72n60a3.pdf

IXGR72N60B3D1 IXGR72N60B3D1

VCES = 600VGenX3TM 600V IGBTIXGR72N60A3IC110 = 52AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingtfi(typ) = 250nsSymbol Test Conditions Maximum RatingsISOPLUS247TM (IXGR)VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 52 AGICM TC

 5.3. Size:219K  ixys
 ixgr72n60a3h1.pdf

IXGR72N60B3D1 IXGR72N60B3D1

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGR72N60A3H1w/Diode IC110 = 52AVCE(sat) 1.35V(Electrically Isolated Back Surface)tfi(typ) = 250nsUltra-Low Vsat PT IGBT for up to5kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous

 5.4. Size:221K  ixys
 ixgr72n60c3.pdf

IXGR72N60B3D1 IXGR72N60B3D1

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60C3IC110 = 35A(Electrically Isolated Tab)VCE(sat) 2.7Vtfi(typ) = 55nsHigh-Speed Low-Vsat PT IGBT40-100 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGC Isolated TabVGES Co

Datasheet: IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 , IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , FGPF4536 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 .

 

 
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