IXGX100N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Technical InformationHigh Voltage IGBT VCES = 1700VIXGK100N170IC90 = 100AIXGX100N170VCE(sat) 3.0VTO-264Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC(TAB)EEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 170 APLUS247TMIC90 T

VCES = 1700VHigh Voltage IXGK100N170IC90 = 100AIGBTs IXGX100N170 VCE(sat) 3.0V TO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V GCVCGR TJ = 25C to 150C, RGE = 1M 1700 VETabVGES Continuous 20 VVGEM Transient 30 VPLUS247 (IXGX)IC25 TC= 25C ( Chip Capability ) 170 AILRMS Terminal Current Limit

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

GenX3TM A3-Class IXGK120N60A3 VCES = 600VIXGX120N60A3IC110 = 120AIGBTSVCE(sat) 1.35VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VG(TAB)CVGES Continuous 20 VEEVGEM Transient 30 VIC25 TC = 25C 200 APLUS 2

ADVANCE TECHNICAL INFORMATIONVCES = 600 VHiPerFASTTM IGBT IXGK 120N60C2IC110 = 120 ALightspeed 2TM SeriesIXGX 120N60C2VCE(sat) = 2.5 Vtfi(typ) = 45 nsSymbol Test Conditions Maximum RatingsTO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C (limited by leads)

Advance Technical InformationVCES = 1200VIXGK120N120B3GenX3TM 1200V IGBTsIC90 = 120AIXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTsfor 3-20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247TM (IXG

HiPerFASTTM IGBTIXGH 12N90C VCES = 900 VLightspeedTM Series IXGX 12N90C IC25 = 24 AVCES(sat) = 3.0 Vtfi(typ) = 70 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 APLUS 247 (IXGX)ICM TC = 25

HiPerFASTTM IGBTIXGK 120N60B VCES = 600 VIXGX 120N60B IC25 = 200 AVCE(sat) = 2.1 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXGX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C 200 A TO-264 AAIC90 TC = 90C 120 A (IXGK)IL(RMS) External lead limit 76 AICM TC

Preliminary Technical InformationGenX3TM A3-Class VCES = 1200VIXGK120N120A3IC110 = 120AIGBTsIXGX120N120A3 VCE(sat) 2.20V Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VC(TAB)EEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VPLUS 247T

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25

HiPerFASTTM IGBTs VCES = 600VIXGK120N60BIC90 = 120AIXGX120N60BVCE(sat) 2.1VTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 200 AIC90 TC = 90C 120 AILRMS Termin