IXGX100N170 Specs and Replacement
Type Designator: IXGX100N170
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 170 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 192 nS
Coesⓘ - Output Capacitance, typ: 455 pF
Package: PLUS247
- IGBTⓘ Cross-Reference Search
IXGX100N170 datasheet
..1. Size:201K ixys
ixgk100n170 ixgx100n170.pdf 

Preliminary Technical Information High Voltage IGBT VCES = 1700V IXGK100N170 IC90 = 100A IXGX100N170 VCE(sat) 3.0V TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) E E VGEM Transient 30 V IC25 TC = 25 C (Chip Capability) 170 A PLUS247TM IC90 T... See More ⇒
..2. Size:185K ixys
ixgx100n170.pdf 

VCES = 1700V High Voltage IXGK100N170 IC90 = 100A IGBTs IXGX100N170 VCE(sat) 3.0V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V E Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247 (IXGX) IC25 TC= 25 C ( Chip Capability ) 170 A ILRMS Terminal Current Limit ... See More ⇒
9.1. Size:197K ixys
ixgk120n60b3-ixgx120n60b3.pdf 

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG... See More ⇒
9.2. Size:194K ixys
ixgx120n60b3.pdf 

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG... See More ⇒
9.3. Size:211K ixys
ixgx120n60a3.pdf 

GenX3TM A3-Class IXGK120N60A3 VCES = 600V IXGX120N60A3 IC110 = 120A IGBTS VCE(sat) 1.35V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G (TAB) C VGES Continuous 20 V E E VGEM Transient 30 V IC25 TC = 25 C 200 A PLUS 2... See More ⇒
9.4. Size:925K ixys
ixgk120n60c2 ixgx120n60c2.pdf 

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGK 120N60C2 IC110 = 120 A Lightspeed 2TM Series IXGX 120N60C2 VCE(sat) = 2.5 V tfi(typ) = 45 ns Symbol Test Conditions Maximum Ratings TO-264(IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C (limited by leads)... See More ⇒
9.5. Size:123K ixys
ixgx120n120b3 ixgk120n120b3.pdf 

Advance Technical Information VCES = 1200V IXGK120N120B3 GenX3TM 1200V IGBTs IC90 = 120A IXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247TM (IXG... See More ⇒
9.6. Size:141K ixys
ixgx12n90c.pdf 

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A PLUS 247 (IXGX) ICM TC = 25 ... See More ⇒
9.7. Size:601K ixys
ixgk120n60b ixgx120n60b.pdf 

HiPerFASTTM IGBT IXGK 120N60B VCES = 600 V IXGX 120N60B IC25 = 200 A VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXGX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C 200 A TO-264 AA IC90 TC = 90 C 120 A (IXGK) IL(RMS) External lead limit 76 A ICM TC ... See More ⇒
9.8. Size:215K ixys
ixgx120n120a3.pdf 

Preliminary Technical Information GenX3TM A3-Class VCES = 1200V IXGK120N120A3 IC110 = 120A IGBTs IXGX120N120A3 VCE(sat) 2.20V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247T... See More ⇒
9.9. Size:186K ixys
ixgx120n60c2.pdf 

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC25 TC = 25 ... See More ⇒
9.10. Size:154K ixys
ixgx120n60b.pdf 

HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B VCE(sat) 2.1V TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 200 A IC90 TC = 90 C 120 A ILRMS Termin... See More ⇒
Specs: IXGT60N60C3D1, IXGT64N60A3, IXGT64N60B3, IXGT6N170, IXGT6N170A, IXGT72N60A3, IXGT72N60B3, IXGV25N250S, AOK40B65H2AL, IXGX120N120A3, IXGX120N120B3, IXGX120N60A3, IXGX120N60B3, IXGX120N60C2, IXGX12N90C, IXGX28N140B3H1, IXGX320N60A3
Keywords - IXGX100N170 transistor spec
IXGX100N170 cross reference
IXGX100N170 equivalent finder
IXGX100N170 lookup
IXGX100N170 substitution
IXGX100N170 replacement