All IGBT. IXGX100N170 Datasheet

 

IXGX100N170 Datasheet and Replacement


   Type Designator: IXGX100N170
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 170 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 192 nS
   Coesⓘ - Output Capacitance, typ: 455 pF
   Package: PLUS247
      - IGBT Cross-Reference

 

IXGX100N170 Datasheet (PDF)

 ..1. Size:201K  ixys
ixgk100n170 ixgx100n170.pdf pdf_icon

IXGX100N170

Preliminary Technical InformationHigh Voltage IGBT VCES = 1700VIXGK100N170IC90 = 100AIXGX100N170VCE(sat) 3.0VTO-264Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC(TAB)EEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 170 APLUS247TMIC90 T

 ..2. Size:185K  ixys
ixgx100n170.pdf pdf_icon

IXGX100N170

VCES = 1700VHigh Voltage IXGK100N170IC90 = 100AIGBTs IXGX100N170 VCE(sat) 3.0V TO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V GCVCGR TJ = 25C to 150C, RGE = 1M 1700 VETabVGES Continuous 20 VVGEM Transient 30 VPLUS247 (IXGX)IC25 TC= 25C ( Chip Capability ) 170 AILRMS Terminal Current Limit

 9.1. Size:197K  ixys
ixgk120n60b3-ixgx120n60b3.pdf pdf_icon

IXGX100N170

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

 9.2. Size:194K  ixys
ixgx120n60b3.pdf pdf_icon

IXGX100N170

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

Datasheet: IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 , IXGV25N250S , FGL60N100BNTD , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 .

History: MUBW50-06A8 | IKQ100N60T | IGW40T120 | IXGK120N120B3 | IXGX12N90C | IXGH17N100U1 | IXGP12N100AU1

Keywords - IXGX100N170 transistor datasheet

 IXGX100N170 cross reference
 IXGX100N170 equivalent finder
 IXGX100N170 lookup
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