IXGX50N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGX50N60BD1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 340 pF
Qgⓘ - Carga total de la puerta, typ: 110 nC
Paquete / Cubierta: PLUS247
- Selección de transistores por parámetros
IXGX50N60BD1 Datasheet (PDF)
ixgx50n60bd1.pdf
IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m
ixgx50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
ixgk50n60b2d1 ixgx50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
ixgx50n60a2d1.pdf
Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I
Otros transistores... IXGX35N120C , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , IHW20N120R2 , IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 .
History: SGB15N120
History: SGB15N120
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