Справочник IGBT. IXGX50N60BD1

 

IXGX50N60BD1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGX50N60BD1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 50 nS
   Coesⓘ - Выходная емкость, типовая: 340 pF
   Qgⓘ - Общий заряд затвора, typ: 110 nC
   Тип корпуса: PLUS247

 Аналог (замена) для IXGX50N60BD1

 

 

IXGX50N60BD1 Datasheet (PDF)

 ..1. Size:88K  ixys
 ixgx50n60bd1.pdf

IXGX50N60BD1 IXGX50N60BD1

IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m

 4.1. Size:494K  ixys
 ixgx50n60b2d1.pdf

IXGX50N60BD1 IXGX50N60BD1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 4.2. Size:627K  ixys
 ixgk50n60b2d1 ixgx50n60b2d1.pdf

IXGX50N60BD1 IXGX50N60BD1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 5.1. Size:121K  ixys
 ixgx50n60a2d1.pdf

IXGX50N60BD1 IXGX50N60BD1

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 5.2. Size:136K  ixys
 ixgx50n60au1.pdf

IXGX50N60BD1 IXGX50N60BD1

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 5.3. Size:493K  ixys
 ixgx50n60c2d1.pdf

IXGX50N60BD1 IXGX50N60BD1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 5.4. Size:136K  ixys
 ixgx50n60au1s.pdf

IXGX50N60BD1 IXGX50N60BD1

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 5.5. Size:628K  ixys
 ixgk50n60c2d1 ixgx50n60c2d1.pdf

IXGX50N60BD1 IXGX50N60BD1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 5.6. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf

IXGX50N60BD1 IXGX50N60BD1

Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient

Другие IGBT... IXGX35N120C , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , YGW75N65F1 , IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 .

 

 
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