IXGX50N60BD1 Specs and Replacement
Type Designator: IXGX50N60BD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 340 pF
Package: PLUS247
IXGX50N60BD1 Substitution - IGBTⓘ Cross-Reference Search
IXGX50N60BD1 datasheet
ixgx50n60bd1.pdf
IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A PLUS247 IC90 TC = 90 C50 A (IXGX) ICM TC = 25 C, 1 m... See More ⇒
ixgx50n60b2d1.pdf
Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C... See More ⇒
ixgk50n60b2d1 ixgx50n60b2d1.pdf
Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C... See More ⇒
ixgx50n60a2d1.pdf
Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I... See More ⇒
Specs: IXGX35N120C, IXGX35N120CD1, IXGX400N30A, IXGX400N30A3, IXGX40N60BD1, IXGX50N120C3H1, IXGX50N60A2D1, IXGX50N60B2D1, KGF75N65KDF, IXGX50N60C2D1, IXGX50N90B2D1, IXGX55N120A3H1, IXGX60N60B2D1, IXGX60N60C2D1, IXGX64N60B3D1, IXGX72N60A3H1, IXGX72N60B3H1
Keywords - IXGX50N60BD1 transistor spec
IXGX50N60BD1 cross reference
IXGX50N60BD1 equivalent finder
IXGX50N60BD1 lookup
IXGX50N60BD1 substitution
IXGX50N60BD1 replacement
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