IXSH45N120B Todos los transistores

 

IXSH45N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXSH45N120B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 240 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IXSH45N120B IGBT

   - Selección ⓘ de transistores por parámetros

 

IXSH45N120B datasheet

 ..1. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXSH45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26

 ..2. Size:53K  ixys
 ixsh45n120b.pdf pdf_icon

IXSH45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26

 4.1. Size:91K  ixys
 ixsh45n120.pdf pdf_icon

IXSH45N120B

High Voltage, IXSH 45N120 VCES = 1200 V Low VCE(sat) IGBT IC25 = 75 A VCE(sat) = 3 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C45 A E = Em

 6.1. Size:102K  ixys
 ixsh45n100.pdf pdf_icon

IXSH45N120B

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 V IXSM 45N100 IC25 = 75 A VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC90 TC = 90 C45 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 180 A

MOSTRAR MÁS

Otros transistores... IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , SGT50T65FD1PN , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B .

History: FGH60N60UFD

 

 

 


 
↑ Back to Top
.