IXSH45N120B PDF and Equivalents Search

 

IXSH45N120B Specs and Replacement

Type Designator: IXSH45N120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

 IXSH45N120B Substitution

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IXSH45N120B datasheet

 ..1. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXSH45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

 ..2. Size:53K  ixys
 ixsh45n120b.pdf pdf_icon

IXSH45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

 4.1. Size:91K  ixys
 ixsh45n120.pdf pdf_icon

IXSH45N120B

High Voltage, IXSH 45N120 VCES = 1200 V Low VCE(sat) IGBT IC25 = 75 A VCE(sat) = 3 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C45 A E = Em... See More ⇒

 6.1. Size:102K  ixys
 ixsh45n100.pdf pdf_icon

IXSH45N120B

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 V IXSM 45N100 IC25 = 75 A VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC90 TC = 90 C45 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 180 A ... See More ⇒

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Specs: IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, IXSH35N120B, SIG20N60P1A, SGT50T65FD1PN, IXSK35N120BD1, IXSK80N60B, IXSN80N60BD1, IXSP10N60B2D1, IXSP15N120B, IXSP20N60B2, IXSP20N60B2D1, IXSP24N60B

Keywords - IXSH45N120B transistor spec

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