IXSX80N60B Todos los transistores

 

IXSX80N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSX80N60B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 660 pF

Encapsulados: PLUS247

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IXSX80N60B datasheet

 ..1. Size:43K  ixys
 ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 V High Current IGBT Short Circuit SOA Capability IXSX 80N60B IC25 = 160 A VCE(sat) = 2.5 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C (silicon chip capability) 160 A TO-264 AA IC90 TC = 90 C (

 ..2. Size:45K  ixys
 ixsk80n60b ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 V High Current IGBT Short Circuit SOA Capability IXSX 80N60B IC25 = 160 A VCE(sat) = 2.5 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C (silicon chip capability) 160 A TO-264 AA IC90 TC = 90 C (

Otros transistores... IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , CRG15T120BNR3S , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 .

History: SKM600GA12T4 | NCE80TD60BT | IXSR35N120BD1 | IXXH100N60C3 | STGF15M65DF2 | STGB35N35LZ | SL40T65FL

 

 

 

 

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