IXSX80N60B Todos los transistores

 

IXSX80N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXSX80N60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 660 pF
   Paquete / Cubierta: PLUS247
     - Selección de transistores por parámetros

 

IXSX80N60B Datasheet (PDF)

 ..1. Size:43K  ixys
 ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (

 ..2. Size:45K  ixys
 ixsk80n60b ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (

Otros transistores... IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , JT075N065WED , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 .

History: IGW50N60TP | APT20GF120KR | IXGH50N60C2 | AFGHL40T65SPD | IXGC16N60C2 | MM50G3U120BMX | IXYH24N90C3D1

 

 
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