All IGBT. IXSX80N60B Datasheet

 

IXSX80N60B Datasheet and Replacement


   Type Designator: IXSX80N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 660 pF
   Package: PLUS247
      - IGBT Cross-Reference

 

IXSX80N60B Datasheet (PDF)

 ..1. Size:43K  ixys
 ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (

 ..2. Size:45K  ixys
 ixsk80n60b ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (

Datasheet: IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , JT075N065WED , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IXSX80N60B transistor datasheet

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 IXSX80N60B equivalent finder
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