IXSX80N60B PDF and Equivalents Search

 

IXSX80N60B Specs and Replacement

Type Designator: IXSX80N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 660 pF

Package: PLUS247

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IXSX80N60B datasheet

 ..1. Size:43K  ixys
 ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 V High Current IGBT Short Circuit SOA Capability IXSX 80N60B IC25 = 160 A VCE(sat) = 2.5 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C (silicon chip capability) 160 A TO-264 AA IC90 TC = 90 C (... See More ⇒

 ..2. Size:45K  ixys
 ixsk80n60b ixsx80n60b.pdf pdf_icon

IXSX80N60B

IXSK 80N60B VCES = 600 V High Current IGBT Short Circuit SOA Capability IXSX 80N60B IC25 = 160 A VCE(sat) = 2.5 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C (silicon chip capability) 160 A TO-264 AA IC90 TC = 90 C (... See More ⇒

Specs: IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , CRG15T120BNR3S , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 .

Keywords - IXSX80N60B transistor spec

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