IXXH50N60B3D1 Todos los transistores

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IXXH50N60B3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXH50N60B3D1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.8V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 120A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 135

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXXH50N60B3D1 Datasheet (PDF)

1.1. ixxh50n60c3d1.pdf Size:195K _ixys

IXXH50N60B3D1
IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3D1 IC110 = 50A GenX3TM w/ Diode ? ? VCE(sat) ? 2.30V ? ? tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 175C 600 V G VCGR TJ = 25C to 175C, RGE = 1M? 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V G = G

1.2. ixxh50n60c3.pdf Size:176K _ixys

IXXH50N60B3D1
IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3 IC110 = 50A GenX3TM ? ? VCE(sat) ? 2.30V ? ? tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 175C 600 V VCGR TJ = 25C to 175C, RGE = 1M? 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25C 1

1.3. ixxh50n60b3d1.pdf Size:192K _igbt_a

IXXH50N60B3D1
IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM IGBT 600V IXXH50N60B3D1 IC110 = 50A GenX3TM w/ Diode ≤ ≤ VCE(sat) ≤ 1.80V ≤ ≤ tfi(typ) = 135ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGE

1.4. ixxh50n60c3d1.pdf Size:193K _igbt_a

IXXH50N60B3D1
IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3D1 IC110 = 50A GenX3TM w/ Diode ≤ ≤ VCE(sat) ≤ 2.30V ≤ ≤ tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V G VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V C Tab E VGES Continuous ±20 V VGEM Tra

1.5. ixxh50n60b3.pdf Size:224K _igbt_a

IXXH50N60B3D1
IXXH50N60B3D1

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 ≤ ≤ VCE(sat) ≤ 1.80V ≤ ≤ IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V VG

1.6. ixxh50n60c3.pdf Size:174K _igbt_a

IXXH50N60B3D1
IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3 IC110 = 50A GenX3TM ≤ ≤ VCE(sat) ≤ 2.30V ≤ ≤ tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient ±30

Otros transistores... IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , G30N60C3D , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , IXXK100N60C3H1 .

 


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