IXXH50N60B3D1 PDF and Equivalents Search

 

IXXH50N60B3D1 Specs and Replacement

Type Designator: IXXH50N60B3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 195 pF

Package: TO247

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IXXH50N60B3D1 datasheet

 ..1. Size:192K  ixys
 ixxh50n60b3d1.pdf pdf_icon

IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM IGBT 600V IXXH50N60B3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 1.80V tfi(typ) = 135ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGE... See More ⇒

 3.1. Size:224K  ixys
 ixxh50n60b3.pdf pdf_icon

IXXH50N60B3D1

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG... See More ⇒

 5.1. Size:174K  ixys
 ixxh50n60c3.pdf pdf_icon

IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3 IC110 = 50A GenX3TM VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30... See More ⇒

 5.2. Size:193K  ixys
 ixxh50n60c3d1.pdf pdf_icon

IXXH50N60B3D1

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Tra... See More ⇒

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Specs: IXSX40N60BD1, IXSX80N60B, IXXA50N60B3, IXXH100N60B3, IXXH100N60C3, IXXH30N60B3D1, IXXH30N60C3D1, IXXH50N60B3, IKW50N60H3, IXXH50N60C3, IXXH50N60C3D1, IXXH75N60B3, IXXH75N60B3D1, IXXH75N60C3, IXXH75N60C3D1, IXXK100N60B3H1, IXXK100N60C3H1

Keywords - IXXH50N60B3D1 transistor spec

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