2PG009 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2PG009
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 40 W
|Vce|ⓘ - Tensión máxima colector-emisor: 510 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 610 nS
Coesⓘ - Capacitancia de salida, typ: 125 pF
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
2PG009 Datasheet (PDF)
2pg009.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
2pg006.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)
2pg001.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
Otros transistores... MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , FGD4536 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q .
History: KWMFP40R12NS3 | IXGC16N60C2 | RJH60A83RDPP-M0 | APT20GF120KR | AFGHL40T65SPD | IXYH24N90C3D1 | MM50G3U120BMX
History: KWMFP40R12NS3 | IXGC16N60C2 | RJH60A83RDPP-M0 | APT20GF120KR | AFGHL40T65SPD | IXYH24N90C3D1 | MM50G3U120BMX



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