All IGBT. 2PG009 Datasheet

 

2PG009 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2PG009
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 510 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 610 nS
   Coesⓘ - Output Capacitance, typ: 125 pF
   Qgⓘ - Total Gate Charge, typ: 51 nC
   Package: TO220F

 2PG009 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG009 Datasheet (PDF)

 ..1. Size:417K  fuji
 2pg009.pdf

2PG009 2PG009

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

 9.1. Size:398K  panasonic
 2pg006.pdf

2PG009 2PG009

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)

 9.2. Size:300K  panasonic
 2pg001.pdf

2PG009 2PG009

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

Datasheet: MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , FGD4536 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q .

 

 
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