2PG009 Specs and Replacement
Type Designator: 2PG009
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 510 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 610 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: TO220F
2PG009 Substitution - IGBT ⓘ Cross-Reference Search
2PG009 datasheet
2pg009.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
2pg006.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Package Features Code Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
2pg001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
Specs: MIO1800-17E10, MIO2400-17E10, MIO600-65E11, MITA10WB1200TMH, MITA15WB1200TMH, MITA30WB600TMH, MITB10WB1200TMH, MITB15WB1200TMH, FGH60N60SMD, MIXA100W1200TEH, IGC27T120T6L, MIXA101W1200EH, IGC19T65QE, MIXA10W1200TMH, IGC193T120T8RM, MIXA10W1200TML, IGC18T120T8Q
Keywords - 2PG009 transistor spec
2PG009 cross reference
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