2PG009 Datasheet and Replacement
Type Designator: 2PG009
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 510 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 610 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: TO220F
- IGBT Cross-Reference
2PG009 Datasheet (PDF)
2pg009.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
2pg006.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)
2pg001.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
Datasheet: MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , FGD4536 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q .
History: IKW75N65EL5 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | IXXN110N65C4H1 | BLG20T65FULA-P | 7MBR25SA120-01
Keywords - 2PG009 transistor datasheet
2PG009 cross reference
2PG009 equivalent finder
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History: IKW75N65EL5 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | IXXN110N65C4H1 | BLG20T65FULA-P | 7MBR25SA120-01



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