2PG009 PDF and Equivalents Search

 

2PG009 Specs and Replacement

Type Designator: 2PG009

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 40 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 510 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 610 nS

Coesⓘ - Output Capacitance, typ: 125 pF

Package: TO220F

 2PG009 Substitution

- IGBT ⓘ Cross-Reference Search

 

2PG009 datasheet

 ..1. Size:417K  fuji
2pg009.pdf pdf_icon

2PG009

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

 9.1. Size:398K  panasonic
2pg006.pdf pdf_icon

2PG009

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Package Features Code Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

 9.2. Size:300K  panasonic
2pg001.pdf pdf_icon

2PG009

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

Specs: MIO1800-17E10, MIO2400-17E10, MIO600-65E11, MITA10WB1200TMH, MITA15WB1200TMH, MITA30WB600TMH, MITB10WB1200TMH, MITB15WB1200TMH, FGH60N60SMD, MIXA100W1200TEH, IGC27T120T6L, MIXA101W1200EH, IGC19T65QE, MIXA10W1200TMH, IGC193T120T8RM, MIXA10W1200TML, IGC18T120T8Q

Keywords - 2PG009 transistor spec

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