GA150TD120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA150TD120U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 780 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 208 nS
Coesⓘ - Capacitancia de salida, typ: 1139 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
GA150TD120U Datasheet (PDF)
ga150td120u.pdf

PD - 5.067AGA150TD120UPRELIMINARY"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A
ga150td12u.pdf

PD -5.067GA150TD120UP "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A recovery
ga150ts60u.pdf

PD -50056CGA150TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeatures Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit
ga150ks61u.pdf

PD -94346GA150KS61U Low Side Switch Chopper ModuleIGBT INT-A-PAKUltra-FastTM Speed IGBTFeatures3 Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating1 frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft
Otros transistores... DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , MBQ40T65FDSC , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S .
History: STGW20V60DF | CM200DY-12H | IXGT4N250C | AUIRG4BC30S-S | ISL9V3040D3STV | SKM400GA124D | 6MBP25VBA120-50
History: STGW20V60DF | CM200DY-12H | IXGT4N250C | AUIRG4BC30S-S | ISL9V3040D3STV | SKM400GA124D | 6MBP25VBA120-50



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