GA150TD120U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA150TD120U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 780 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
trⓘ - Tiempo de subida, typ: 208 nS
Coesⓘ - Capacitancia de salida, typ: 1139 pF
Encapsulados: MODULE
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GA150TD120U datasheet
ga150td120u.pdf
PD - 5.067A GA150TD120U PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft @VGE = 15V, IC = 150A
ga150td12u.pdf
PD -5.067 GA150TD120U P "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft @VGE = 15V, IC = 150A recovery
ga150ts60u.pdf
PD -50056C GA150TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features Features Features Features Features Generation 4 IGBT technology VCES = 600V UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit
ga150ks61u.pdf
PD -94346 GA150KS61U Low Side Switch Chopper Module IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features 3 Generation 4 IGBT technology VCES = 600V UltraFast Optimized for high operating 1 frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.7V 6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft
Otros transistores... DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , TGD30N40P , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S .
History: GA125TS120U
History: GA125TS120U
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