All IGBT. GA150TD120U Datasheet

 

GA150TD120U IGBT. Datasheet pdf. Equivalent


   Type Designator: GA150TD120U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 208 nS
   Coesⓘ - Output Capacitance, typ: 1139 pF
   Qgⓘ - Total Gate Charge, typ: 1139 nC
   Package: MODULE

 GA150TD120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA150TD120U Datasheet (PDF)

 ..1. Size:298K  international rectifier
 ga150td120u.pdf

GA150TD120U GA150TD120U

PD - 5.067AGA150TD120UPRELIMINARY"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A

 5.1. Size:181K  international rectifier
 ga150td12u.pdf

GA150TD120U GA150TD120U

PD -5.067GA150TD120UP "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A recovery

 8.1. Size:251K  international rectifier
 ga150ts60u.pdf

GA150TD120U GA150TD120U

PD -50056CGA150TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeatures Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit

 9.1. Size:154K  international rectifier
 ga150ks61u.pdf

GA150TD120U GA150TD120U

PD -94346GA150KS61U Low Side Switch Chopper ModuleIGBT INT-A-PAKUltra-FastTM Speed IGBTFeatures3 Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating1 frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft

Datasheet: DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , RJP6065DPM , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S .

 

 
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