Справочник IGBT. GA150TD120U

 

GA150TD120U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: GA150TD120U
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 780 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 208 nS
   Coesⓘ - Выходная емкость, типовая: 1139 pF
   Qgⓘ - Общий заряд затвора, typ: 1139 nC
   Тип корпуса: MODULE

 Аналог (замена) для GA150TD120U

 

 

GA150TD120U Datasheet (PDF)

 ..1. Size:298K  international rectifier
 ga150td120u.pdf

GA150TD120U GA150TD120U

PD - 5.067AGA150TD120UPRELIMINARY"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A

 5.1. Size:181K  international rectifier
 ga150td12u.pdf

GA150TD120U GA150TD120U

PD -5.067GA150TD120UP "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A recovery

 8.1. Size:251K  international rectifier
 ga150ts60u.pdf

GA150TD120U GA150TD120U

PD -50056CGA150TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeatures Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit

 9.1. Size:154K  international rectifier
 ga150ks61u.pdf

GA150TD120U GA150TD120U

PD -94346GA150KS61U Low Side Switch Chopper ModuleIGBT INT-A-PAKUltra-FastTM Speed IGBTFeatures3 Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating1 frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft

Другие IGBT... DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , RJP6065DPM , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S .

 

 
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