IGC19T65QE Todos los transistores

IGC19T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

SIGC19T60SE IGBT 3 Chip Features Recommended for 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications short tail current drives positive temperature coefficient white goods easy paralleling G resonant applications E Qualified according to JEDEC for target

IGC193T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC193T120T8