IGC19T65QE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC19T65QE Datasheet (PDF)

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IGC19T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

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SIGC19T60SE IGBT 3 Chip Features: Recommended for: 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications: short tail current drives positive temperature coefficient white goods easy parallelingG resonant applications E Qualified according to JEDEC for target

9.1. Size:70K infineon
igc193t120t8rm.pdf pdf_icon

IGC193T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC193T120T8

Otros transistores... MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , SGT50T65FD1PT , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML .