IGC19T65QE IGBT. Datasheet pdf. Equivalent
Type Designator: IGC19T65QE
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.32 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Package: CHIP
IGC19T65QE Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC19T65QE Datasheet (PDF)
igc19t65qe.pdf
IGC19T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching
sigc19t60se.pdf
SIGC19T60SE IGBT 3 Chip Features: Recommended for: 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications: short tail current drives positive temperature coefficient white goods easy parallelingG resonant applications E Qualified according to JEDEC for target
igc193t120t8rm.pdf
IGC193T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC193T120T8
Datasheet: MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , SGT40N60NPFDPN , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2