IGC19T65QE - аналоги, параметры транзистора - Справочник транзисторов

IGC19T65QE даташит

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IGC19T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

7.1. Size:118K infineon
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SIGC19T60SE IGBT 3 Chip Features Recommended for 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications short tail current drives positive temperature coefficient white goods easy paralleling G resonant applications E Qualified according to JEDEC for target

9.1. Size:70K infineon
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IGC193T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC193T120T8

Другие IGBT... MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IXGH60N60 , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML .