IGC39T65T8M - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC39T65T8M
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.82 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Paquete / Cubierta: CHIP
Búsqueda de reemplazo de IGC39T65T8M - IGBT
IGC39T65T8M Datasheet (PDF)
igc39t65t8m.pdf
IGC39T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC39T65T8
igc39t65qe.pdf
IGC39T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching
sigc39t65e.pdf
SIGC39T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC39T65E 650
sigc39t60e.pdf
SIGC39T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil
sigc39t60s.pdf
SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60SE 600V 75A 6.59 x 5.91 mm2 sawn on
sigc39t60se.pdf
SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60SE 600V 75A 6.59 x 5.91 mm2 saw
Otros transistores... IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IHW20N135R5 , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2