IGC39T65T8M - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC39T65T8M
Tipo de transistor: IGBT
Polaridad de transistor: N
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 75
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.82
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 175
Paquete / Cubierta: CHIP
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IGC39T65T8M Datasheet (PDF)
igc39t65t8m.pdf
IGC39T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC39T65T8
igc39t65qe.pdf
IGC39T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching
sigc39t65e.pdf
SIGC39T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC39T65E 650
sigc39t60e.pdf
SIGC39T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil
sigc39t60s.pdf
SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60SE 600V 75A 6.59 x 5.91 mm2 sawn on
sigc39t60se.pdf
SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60SE 600V 75A 6.59 x 5.91 mm2 saw
Otros transistores... IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , STGB10NB37LZ , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ