IGC39T65T8M Todos los transistores

 

IGC39T65T8M - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC39T65T8M
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.82 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: CHIP
     - Selección de transistores por parámetros

 

IGC39T65T8M Datasheet (PDF)

 ..1. Size:66K  infineon
igc39t65t8m.pdf pdf_icon

IGC39T65T8M

IGC39T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC39T65T8

 6.1. Size:232K  infineon
igc39t65qe.pdf pdf_icon

IGC39T65T8M

IGC39T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

 6.2. Size:122K  infineon
sigc39t65e.pdf pdf_icon

IGC39T65T8M

SIGC39T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC39T65E 650

 7.1. Size:120K  infineon
sigc39t60e.pdf pdf_icon

IGC39T65T8M

SIGC39T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil

Otros transistores... IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , CRG60T60AN3H , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE .

History: IGP15N60T | IGC41T120T8Q | STGWT30V60DF | STGWA80H65FB | STGWT80H65DFB | DIM250PKM33-TL | DGW50N65CTL1

 

 
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