IGC39T65T8M PDF and Equivalents Search

 

IGC39T65T8M Specs and Replacement

Type Designator: IGC39T65T8M

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃

Package: CHIP

 IGC39T65T8M Substitution

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IGC39T65T8M datasheet

 ..1. Size:66K  infineon
igc39t65t8m.pdf pdf_icon

IGC39T65T8M

IGC39T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC39T65T8... See More ⇒

 6.1. Size:232K  infineon
igc39t65qe.pdf pdf_icon

IGC39T65T8M

IGC39T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching... See More ⇒

 6.2. Size:122K  infineon
sigc39t65e.pdf pdf_icon

IGC39T65T8M

SIGC39T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC39T65E 650... See More ⇒

 7.1. Size:120K  infineon
sigc39t60e.pdf pdf_icon

IGC39T65T8M

SIGC39T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil ... See More ⇒

Specs: IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , SGT40N60FD2PN , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE .

Keywords - IGC39T65T8M transistor spec

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