All IGBT. IGC39T65T8M Datasheet

 

IGC39T65T8M IGBT. Datasheet pdf. Equivalent


   Type Designator: IGC39T65T8M
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP

 IGC39T65T8M Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGC39T65T8M Datasheet (PDF)

 ..1. Size:66K  infineon
igc39t65t8m.pdf

IGC39T65T8M
IGC39T65T8M

IGC39T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC39T65T8

 6.1. Size:232K  infineon
igc39t65qe.pdf

IGC39T65T8M
IGC39T65T8M

IGC39T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

 6.2. Size:122K  infineon
sigc39t65e.pdf

IGC39T65T8M
IGC39T65T8M

SIGC39T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC39T65E 650

 7.1. Size:120K  infineon
sigc39t60e.pdf

IGC39T65T8M
IGC39T65T8M

SIGC39T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil

 7.2. Size:119K  infineon
sigc39t60s.pdf

IGC39T65T8M
IGC39T65T8M

SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy parallelingE Chip Type VCE IC Die Size PackageSIGC39T60SE 600V 75A 6.59 x 5.91 mm2 sawn on

 7.3. Size:253K  infineon
sigc39t60se.pdf

IGC39T65T8M
IGC39T65T8M

SIGC39T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60SE 600V 75A 6.59 x 5.91 mm2 saw

Datasheet: IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IHW20N135R5 , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE .

 

 
Back to Top