IGC39T65T8M datasheet, аналоги, основные параметры

Наименование: IGC39T65T8M  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.82 V @25℃

Тип корпуса: CHIP

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 Аналог (замена) для IGC39T65T8M

- подбор ⓘ IGBT транзистора по параметрам

 

IGC39T65T8M даташит

 ..1. Size:66K  infineon
 igc39t65t8m.pdf pdf_icon

IGC39T65T8M

IGC39T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC39T65T8

 6.1. Size:232K  infineon
 igc39t65qe.pdf pdf_icon

IGC39T65T8M

IGC39T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

 6.2. Size:122K  infineon
 sigc39t65e.pdf pdf_icon

IGC39T65T8M

SIGC39T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC39T65E 650

 7.1. Size:120K  infineon
 sigc39t60e.pdf pdf_icon

IGC39T65T8M

SIGC39T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC39T60E 600V 75A 6.59 x 5.91 mm2 sawn on foil

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IGC50T120T8RQ, MIXA20W1200TML, IGC50T120T8RL, MIXA20WB1200TED, IGC50T120T6RL, MIXA20WB1200TMH, IGC41T120T8Q, MIXA20WB1200TML, CRG40T60AK3HD, MIXA30W1200TED, IGC39T65QE, MIXA30W1200TMH, IGC36T120T8L, MIXA30W1200TML, IGC36T120T6L, MIXA30WB1200TED, IGC31T65QE