GA200SA60U Todos los transistores

 ..1. Size:197K  international rectifier
 ga200sa60u.pdf

D GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for minimum saturation voltage VCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses VCE(on) typ. = 1.60V G Fully isolate package ( 2,500 Volt AC/RMS) Very low internal

 0.1. Size:166K  vishay
 ga200sa60up.pdf

GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta

 0.2. Size:277K  vishay
 vs-ga200sa60up.pdf

VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

 5.1. Size:201K  international rectifier
 ga200sa60s.pdf

D /) 5)$ 5 I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC) VCE(on) typ. = 1.10V G Very low internal inductance ( 5 nH ty