GA200SA60U Specs and Replacement
Type Designator: GA200SA60U
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: SOT227
GA200SA60U Substitution - IGBT ⓘ Cross-Reference Search
GA200SA60U datasheet
ga200sa60u.pdf
D GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for minimum saturation voltage VCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses VCE(on) typ. = 1.60V G Fully isolate package ( 2,500 Volt AC/RMS) Very low internal ... See More ⇒
ga200sa60up.pdf
GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta... See More ⇒
vs-ga200sa60up.pdf
VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi... See More ⇒
ga200sa60s.pdf
D /) 5)$ 5 I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC) VCE(on) typ. = 1.10V G Very low internal inductance ( 5 nH ty... See More ⇒
Specs: MSG100D350FHS, MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U, GA200SA60S, IXRH40N120, GA200TD120U, GA250TD120U, GA250TS60U, GA300TD60U, GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U
Keywords - GA200SA60U transistor spec
GA200SA60U cross reference
GA200SA60U equivalent finder
GA200SA60U lookup
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