GA200SA60U Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

GA200SA60U Datasheet (PDF)

..1. Size:197K international rectifier
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D GA200SA60U Ultra-FastTM Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for minimum saturation voltageVCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching lossesVCE(on) typ. = 1.60VG Fully isolate package ( 2,500 Volt AC/RMS) Very low internal

0.1. Size:166K vishay
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GA200SA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor(Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed up to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta

0.2. Size:277K vishay
vs-ga200sa60up.pdf pdf_icon

VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

5.1. Size:201K international rectifier
ga200sa60s.pdf pdf_icon

D /) 5)$ 5 I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard : Optimized for minimum saturationVCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC)VCE(on) typ. = 1.10VG Very low internal inductance ( 5 nH ty

Datasheet: MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , NCE80TD65BT , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U .