IGC31T65QE Todos los transistores

 

IGC31T65QE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC31T65QE
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.22 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: CHIP
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IGC31T65QE Datasheet (PDF)

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IGC31T65QE

IGC31T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

Otros transistores... IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , YGW40N65F1 , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH .

History: IGC50T120T8RL | IGC41T120T8Q | IGC189T120T8RL | IGC18T120T8Q | STGWT80H65DFB | T1800GB45A | DGW50N65CTL1

 

 
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