IGC31T65QE PDF and Equivalents Search

 

IGC31T65QE Specs and Replacement

Type Designator: IGC31T65QE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃

Package: CHIP

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IGC31T65QE datasheet

 ..1. Size:233K  infineon
 igc31t65qe.pdf pdf_icon

IGC31T65QE

IGC31T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching... See More ⇒

Specs: IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , NGD8201N , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH .

Keywords - IGC31T65QE transistor spec

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