All IGBT. IGC31T65QE Datasheet

 

IGC31T65QE Datasheet and Replacement


   Type Designator: IGC31T65QE
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP
      - IGBT Cross-Reference

 

IGC31T65QE Datasheet (PDF)

 ..1. Size:233K  infineon
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IGC31T65QE

IGC31T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

Datasheet: IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , YGW40N65F1 , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH .

History: STGWT80H65DFB

Keywords - IGC31T65QE transistor datasheet

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