GA200TD120U Todos los transistores

 ..1. Size:275K  international rectifier
 ga200td120u.pdf

PD - 50061C GA200TD120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 1200V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 200A H

 8.1. Size:265K  international rectifier
 ga200ts60u.pdf

PD -50058C GA200TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r

 8.2. Size:234K  vishay
 ga200ts6.pdf

GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES Generation 4 IGBT technology Ultrafast Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a

 8.3. Size:156K  vishay
 vs-ga200th60s.pdf

VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance case Double INT-A-PAK Fast and soft reverse recovery antiparalle