GA200TD120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GA200TD120U Datasheet (PDF)

..1. Size:275K international rectifier
ga200td120u.pdf pdf_icon

PD - 50061CGA200TD120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A H

8.1. Size:265K international rectifier
ga200ts60u.pdf pdf_icon

PD -50058CGA200TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r

8.2. Size:234K vishay
ga200ts6.pdf pdf_icon

GA200TS60UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 200 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a

8.3. Size:156K vishay
vs-ga200th60s.pdf pdf_icon

VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle

Otros transistores... MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , FGW75N60HD , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S .