GA200TD120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA200TD120U
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1040 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 201 nS
Coesⓘ - Capacitancia de salida, typ: 1660 pF
Qgⓘ - Carga total de la puerta, typ: 1660 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de GA200TD120U - IGBT
GA200TD120U Datasheet (PDF)
ga200td120u.pdf
PD - 50061CGA200TD120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A H
ga200ts60u.pdf
PD -50058CGA200TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r
ga200ts6.pdf
GA200TS60UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 200 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a
vs-ga200th60s.pdf
VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle
Otros transistores... MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , IRG7S313U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S .
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