All IGBT. GA200TD120U Datasheet

 

GA200TD120U IGBT. Datasheet pdf. Equivalent


   Type Designator: GA200TD120U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1040 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 201 nS
   Coesⓘ - Output Capacitance, typ: 1660 pF
   Qgⓘ - Total Gate Charge, typ: 1660 nC
   Package: MODULE

 GA200TD120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA200TD120U Datasheet (PDF)

 ..1. Size:275K  international rectifier
 ga200td120u.pdf

GA200TD120U GA200TD120U

PD - 50061CGA200TD120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A H

 8.1. Size:265K  international rectifier
 ga200ts60u.pdf

GA200TD120U GA200TD120U

PD -50058CGA200TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r

 8.2. Size:234K  vishay
 ga200ts6.pdf

GA200TD120U GA200TD120U

GA200TS60UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 200 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a

 8.3. Size:156K  vishay
 vs-ga200th60s.pdf

GA200TD120U GA200TD120U

VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle

Datasheet: MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , IRG7S313U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S .

 

 
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