GA200TD120U PDF and Equivalents Search

 

GA200TD120U Specs and Replacement

Type Designator: GA200TD120U

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1040 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 201 nS

Coesⓘ - Output Capacitance, typ: 1660 pF

Package: MODULE

 GA200TD120U Substitution

- IGBTⓘ Cross-Reference Search

 

GA200TD120U datasheet

 ..1. Size:275K  international rectifier
ga200td120u.pdf pdf_icon

GA200TD120U

PD - 50061C GA200TD120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 1200V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 200A H... See More ⇒

 8.1. Size:265K  international rectifier
ga200ts60u.pdf pdf_icon

GA200TD120U

PD -50058C GA200TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r... See More ⇒

 8.2. Size:234K  vishay
ga200ts6.pdf pdf_icon

GA200TD120U

GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES Generation 4 IGBT technology Ultrafast Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a... See More ⇒

 8.3. Size:156K  vishay
vs-ga200th60s.pdf pdf_icon

GA200TD120U

VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance case Double INT-A-PAK Fast and soft reverse recovery antiparalle... See More ⇒

Specs: MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U, BT60T60ANFK, GA250TD120U, GA250TS60U, GA300TD60U, GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U, GA600GD25S

Keywords - GA200TD120U transistor spec

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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE

 

 

 

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