Справочник IGBT. GA200TD120U

 

GA200TD120U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: GA200TD120U
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 1040 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 201 nS
   Coesⓘ - Выходная емкость, типовая: 1660 pF
   Qgⓘ - Общий заряд затвора, typ: 1660 nC
   Тип корпуса: MODULE

 Аналог (замена) для GA200TD120U

 

 

GA200TD120U Datasheet (PDF)

 ..1. Size:275K  international rectifier
 ga200td120u.pdf

GA200TD120U GA200TD120U

PD - 50061CGA200TD120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.3V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A H

 8.1. Size:265K  international rectifier
 ga200ts60u.pdf

GA200TD120U GA200TD120U

PD -50058CGA200TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.8V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 200A HEXFRED antiparallel diodes with ultra- soft r

 8.2. Size:234K  vishay
 ga200ts6.pdf

GA200TD120U GA200TD120U

GA200TS60UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 200 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL a

 8.3. Size:156K  vishay
 vs-ga200th60s.pdf

GA200TD120U GA200TD120U

VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle

Другие IGBT... MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , IRG7S313U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S .

 

 
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