IGC89T170S8RM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC89T170S8RM
Tipo de transistor: IGBT
Polaridad de transistor: N
Tensión máxima colector-emisor |Vce|, V: 1700
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 75
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 150
Paquete / Cubierta: CHIP
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IGC89T170S8RM Datasheet (PDF)
igc89t170s8rm.pdf
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IGC89T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC89T170S8RM 1700V 75A 8.85 x 10.09 mm2 sawn on foil Mechanical Parameters Ra
Otros transistores... MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , SGT60N60FD1P7 , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 .
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