All IGBT. IGC89T170S8RM Datasheet

 

IGC89T170S8RM Datasheet and Replacement


   Type Designator: IGC89T170S8RM
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: CHIP
      - IGBT Cross-Reference

 

IGC89T170S8RM Datasheet (PDF)

 ..1. Size:213K  infineon
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IGC89T170S8RM

IGC89T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC89T170S8RM 1700V 75A 8.85 x 10.09 mm2 sawn on foil Mechanical Parameters Ra

Datasheet: MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IRGP4066D , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 .

History: DIM1200ESM33-F | IGC04R60DE

Keywords - IGC89T170S8RM transistor datasheet

 IGC89T170S8RM cross reference
 IGC89T170S8RM equivalent finder
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