IGC82T170S8RM Todos los transistores

 

IGC82T170S8RM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC82T170S8RM
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: CHIP
     - Selección de transistores por parámetros

 

IGC82T170S8RM Datasheet (PDF)

 ..1. Size:151K  infineon
 igc82t170s8rm.pdf pdf_icon

IGC82T170S8RM

IGC82T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC82T170S8RM 1700V 70A 9.10 x 9.06 mm2 sawn on foil Mechanical Parameters Raster

Otros transistores... MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , GT30F125 , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T .

History: IGC07T120T6L | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | T1600GB45G | DIM1200ASM45-TS001 | IGC10R60D

 

 
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