IGC82T170S8RM PDF and Equivalents Search

 

IGC82T170S8RM Specs and Replacement

Type Designator: IGC82T170S8RM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

Package: CHIP

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IGC82T170S8RM datasheet

 ..1. Size:151K  infineon
 igc82t170s8rm.pdf pdf_icon

IGC82T170S8RM

IGC82T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC82T170S8RM 1700V 70A 9.10 x 9.06 mm2 sawn on foil Mechanical Parameters Raster... See More ⇒

Specs: MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , TGAN60N60F2DS , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T .

History: IGC70T120T8RQ

Keywords - IGC82T170S8RM transistor spec

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