All IGBT. IGC82T170S8RM Datasheet

 

IGC82T170S8RM Datasheet and Replacement


   Type Designator: IGC82T170S8RM
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: CHIP
      - IGBT Cross-Reference

 

IGC82T170S8RM Datasheet (PDF)

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IGC82T170S8RM

IGC82T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC82T170S8RM 1700V 70A 9.10 x 9.06 mm2 sawn on foil Mechanical Parameters Raster

Datasheet: MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , GT30F125 , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T .

History: DIM250PKM33-TS | DIM1000ECM33-TS | DIM2400ESS12-A | DGW20N65CTL | IGC114T170S8RH | STGWA40H120DF2

Keywords - IGC82T170S8RM transistor datasheet

 IGC82T170S8RM cross reference
 IGC82T170S8RM equivalent finder
 IGC82T170S8RM lookup
 IGC82T170S8RM substitution
 IGC82T170S8RM replacement

 

 
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