GA400TD25S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA400TD25S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 250 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
trⓘ - Tiempo de subida, typ: 365 nS
Coesⓘ - Capacitancia de salida, typ: 4080 pF
Encapsulados: MODULE
Búsqueda de reemplazo de GA400TD25S IGBT
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GA400TD25S datasheet
ga400td25s.pdf
PD -50051C GA400TD25S Standard Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 250V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 1.3V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft
ga400td60u.pdf
PD - 50059C GA400TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 400A HE
Otros transistores... GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GT30J122 , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 .
History: GA150TD120U | GA300TD60U | AOK60B65H1
History: GA150TD120U | GA300TD60U | AOK60B65H1
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