All IGBT. GA400TD25S Datasheet

 

GA400TD25S IGBT. Datasheet pdf. Equivalent


   Type Designator: GA400TD25S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 365 nS
   Coesⓘ - Output Capacitance, typ: 4080 pF
   Qgⓘ - Total Gate Charge, typ: 1600 nC
   Package: MODULE

 GA400TD25S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA400TD25S Datasheet (PDF)

 ..1. Size:203K  international rectifier
 ga400td25s.pdf

GA400TD25S GA400TD25S

PD -50051CGA400TD25S Standard Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 1.3V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft

 7.1. Size:232K  international rectifier
 ga400td60u.pdf

GA400TD25S GA400TD25S

PD - 50059CGA400TD60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 400A HE

Datasheet: GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , IHW20N120R2 , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 .

 

 
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