GA400TD25S Specs and Replacement
Type Designator: GA400TD25S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
tr ⓘ - Rise Time, typ: 365 nS
Coesⓘ - Output Capacitance, typ: 4080 pF
Package: MODULE GA400TD25S Substitution - IGBT ⓘ Cross-Reference Search
GA400TD25S datasheet
ga400td25s.pdf
PD -50051C GA400TD25S Standard Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 250V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 1.3V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft ... See More ⇒
ga400td60u.pdf
PD - 50059C GA400TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 400A HE... See More ⇒
Specs: GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U, GA200TD120U, GA250TD120U, GA250TS60U, GA300TD60U, GT30J122, GA400TD60U, GA500TD60U, GA50TS120U, GA600GD25S, GA75TS120U, GA75TS60U, GT10G101, GT10J301
Keywords - GA400TD25S transistor spec
GA400TD25S cross reference
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