STGB10NB40LZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB10NB40LZ
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 410 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 12 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 270 nS
Coesⓘ - Capacitancia de salida, typ: 105 pF
Paquete / Cubierta: D2PAK
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STGB10NB40LZ Datasheet (PDF)
stgb10nb40lz.pdf
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Otros transistores... MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , TGPF30N43P , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD .
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