STGB10NB40LZ Todos los transistores

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STGB10NB40LZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGB10NB40LZ

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150W

Tensión colector-emisor (Vce): 410V

Voltaje de saturación colector-emisor (Vce sat): 1.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D2PAK

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STGB10NB40LZ Datasheet (PDF)

1.1. stgb10nb40lz.pdf Size:485K _st

STGB10NB40LZ
STGB10NB40LZ

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D?PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE D2PAK HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a INTERNAL SCHEMATIC DIAGRAM

1.2. stgb10nb40lz.pdf Size:350K _igbt

STGB10NB40LZ
STGB10NB40LZ

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE D2PAK HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a INTERNAL SCHEMATIC D

2.1. stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf Size:433K _st

STGB10NB40LZ
STGB10NB40LZ

STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D?PAK PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE(sat) (Max) IC @25C @100C STGP10NB60S 600 V < 1.7 V 10 A STGP10NB60SFP 600 V < 1.7 V 10 A STGB10NB60S 600 V < 1.7 V 10 A 3 3 2 2 1 1 HIGHT INPUT IMPEDANCE (VOLTAGE TO-220FP TO-220 DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat

2.2. stgb10nb37lz stgp10nb37lz.pdf Size:749K _st

STGB10NB40LZ
STGB10NB40LZ

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D?PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

2.3. stgb10nb60s.pdf Size:91K _st

STGB10NB40LZ
STGB10NB40LZ

STGP10NB60S ? N-CHANNEL 10A - 600V - TO-220 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGP10NB60S 600 V < 1.7 V 10 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (V ) cesat HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 2 DESCRIPTION 1 Using the latest high voltage technology based on a patented strip layout, SGS-Thomson has TO-220 designed an advan

2.4. stgb10nb37lz.pdf Size:443K _st

STGB10NB40LZ
STGB10NB40LZ

STGB10NB37LZ N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT TYPE VCES VCE(sat) IC STGB10NB37LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 1 HIGH VOLTAGE CLAMPING FEATURE D2PAK DESCRIPTION Using the latest high voltage technology based on a INTERNAL SCHEMATIC DIAGRA

2.5. stgb10nb60s.pdf Size:604K _igbt

STGB10NB40LZ
STGB10NB40LZ

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability TAB TAB Applications 3 ■ Light dimmer 3 1 2 1 ■ Static relays TO-220 D2PAK ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-fr

2.6. stgb10nb37lz.pdf Size:747K _igbt

STGB10NB40LZ
STGB10NB40LZ

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features ■ Low threshold voltage ■ Low on-voltage drop TAB TAB ■ Low gate charge ■ High current capability 3 ■ High voltage clamping feature 3 1 2 1 TO-220 D²PAK Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off

Otros transistores... MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , 20N60C3DR , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD .

 


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Introduzca al menos 1 números o letras