STGB10NB40LZ Todos los transistores

 

STGB10NB40LZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB10NB40LZ
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 410 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 12 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 270 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

STGB10NB40LZ Datasheet (PDF)

 ..1. Size:350K  st
stgb10nb40lz.pdf pdf_icon

STGB10NB40LZ

STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED

 6.1. Size:604K  st
stgb10nb60s.pdf pdf_icon

STGB10NB40LZ

STGB10NB60SSTGP10NB60S16 A, 600 V, low drop IGBTFeatures Low on-voltage drop (VCE(sat)) High current capabilityTABTABApplications3 Light dimmer 3 121 Static relaysTO-220 D2PAK Motor driveDescriptionThis IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagramdrop in low-fr

 6.2. Size:747K  st
stgb10nb37lz stgp10nb37lz.pdf pdf_icon

STGB10NB40LZ

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

 6.3. Size:747K  st
stgb10nb37lz.pdf pdf_icon

STGB10NB40LZ

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

Otros transistores... MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , TGPF30N43P , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD .

History: IGW40N60H3 | MPBW15N120BF | MPBQ50N120B

 

 
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History: IGW40N60H3 | MPBW15N120BF | MPBQ50N120B

STGB10NB40LZ
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