STGB10NB40LZ IGBT. Datasheet pdf. Equivalent
Type Designator: STGB10NB40LZ
Type: IGBT + Built-in Zener Diodes
Marking Code: GB10NB40LZ
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 410 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 270 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Qgⓘ - Total Gate Charge, typ: 28 nC
Package: D2PAK
STGB10NB40LZ Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGB10NB40LZ Datasheet (PDF)
stgb10nb40lz.pdf
STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED
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STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgb10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf
STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V
Datasheet: MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , TGPF30N43P , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD .
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