TGH80N65F2DS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGH80N65F2DS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 577 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 69 nS
Coesⓘ - Capacitancia de salida, typ: 230 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de TGH80N65F2DS IGBT
TGH80N65F2DS datasheet
tgh80n65f2ds.pdf
TGH80N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH80N65F2DS
tgh80n65f2d2.pdf
TGH80N65F2D2 Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder, Vienna Rectifier Device Package Marking R
tgh80n65f2dr.pdf
TGH80N65F2DR Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology AEC Q101 Qualified Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar, PTC Heate
Otros transistores... TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
Liste
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