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10N40E1D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 10N40E1D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75

Tensión colector-emisor (Vce): 400

Voltaje de saturación colector-emisor (Vce sat): 2.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 10

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220

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10N40E1D Datasheet (PDF)

1.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N40E1D
10N40E1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impeda

4.1. mtp10n40e.pdf Size:151K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWE

4.2. mtw10n40e.pdf Size:74K _motorola

10N40E1D
10N40E1D

 4.3. mtb10n40e.pdf Size:234K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's Data Sheet MTB10N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount

4.4. mtp10n40erev0x.pdf Size:249K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWE

 4.5. mtb10n40erev0x.pdf Size:273K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's Data Sheet MTB10N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount

4.6. mtn10n40e3.pdf Size:236K _cystek

10N40E1D
10N40E1D

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 400V RDS(ON) : 0.47Ω(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Otros transistores... 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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