TGH80N65F2DS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGH80N65F2DS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 577 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 69 nS

Coesⓘ - Capacitancia de salida, typ: 230 pF

Encapsulados: TO247

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TGH80N65F2DS datasheet

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TGH80N65F2DS

TGH80N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH80N65F2DS

 3.1. Size:979K  trinnotech
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TGH80N65F2DS

TGH80N65F2D2 Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder, Vienna Rectifier Device Package Marking R

 3.2. Size:997K  trinnotech
 tgh80n65f2dr.pdf pdf_icon

TGH80N65F2DS

TGH80N65F2DR Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology AEC Q101 Qualified Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar, PTC Heate

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