TGH80N65F2DS Datasheet. Specs and Replacement

Type Designator: TGH80N65F2DS  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 577 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V

tr ⓘ - Rise Time, typ: 69 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Qg ⓘ - Total Gate Charge, typ: 216 nC

Package: TO247

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TGH80N65F2DS datasheet

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TGH80N65F2DS

TGH80N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH80N65F2DS... See More ⇒

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TGH80N65F2DS

TGH80N65F2D2 Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder, Vienna Rectifier Device Package Marking R... See More ⇒

 3.2. Size:997K  trinnotech
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TGH80N65F2DS

TGH80N65F2DR Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology AEC Q101 Qualified Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar, PTC Heate... See More ⇒

Specs: FGH40N60UFD, TGHP75N120F2D, TGHP75N120FDR, TGL75N120FDR, TGPF15N60FDR, TGPF20N60FDR, TGH80N65F2D2, 1MB03D-120, 1MB05-120

Keywords - TGH80N65F2DS transistor spec

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