All IGBT. 10N40E1D Datasheet

 

10N40E1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N40E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

10N40E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

10N40E1D Datasheet (PDF)

0.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N40E1D
10N40E1D

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

8.1. mtp10n40e.pdf Size:151K _motorola

10N40E1D
10N40E1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETN Channel Enhancement Mode Silicon GateTMOS POWE

8.2. mtw10n40e.pdf Size:74K _motorola

10N40E1D
10N40E1D

 8.3. mtb10n40e.pdf Size:234K _motorola

10N40E1D
10N40E1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

8.4. mtp10n40erev0x.pdf Size:249K _motorola

10N40E1D
10N40E1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETN Channel Enhancement Mode Silicon GateTMOS POWE

 8.5. mtb10n40erev0x.pdf Size:273K _motorola

10N40E1D
10N40E1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

8.6. mtn10n40e3.pdf Size:236K _cystek

10N40E1D
10N40E1D

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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