IKW30N100T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N100T 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 412 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 98 pF
Encapsulados: TO247
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IKW30N100T datasheet
..1. Size:868K infineon
ikw30n100t 1 1.pdf 
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..2. Size:813K infineon
ikw30n100t.pdf
IKW30N100T TrenchStop series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diode C TrenchStop and Fieldstop technology for 1000 V applications offers - low V CE(sat) G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CE(sat) Des
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ikw30n65nl5.pdf
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ikw30n60dtp.pdf
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aikw30n60ct.pdf
AIKW30N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor
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ikw30n60trev2 3g.pdf
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ikw30n65wr5 k30ewr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
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ikw30n65wr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
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ikw30n65es5.pdf
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ikw30n60t.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol
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ikw30n65el5.pdf
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