IKW30N100T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N100T
Tipo de transistor: IGBT + Diode
Código de marcado: K30T100
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 412 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 98 pF
Qgⓘ - Carga total de la puerta, typ: 217 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW30N100T - IGBT
IKW30N100T Datasheet (PDF)
ikw30n100t 1 1.pdf
IKW30N100TTrenchStop seriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diodeC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Des
ikw30n100t.pdf
IKW30N100TTrenchStop seriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diodeC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Des
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ikw30n65wr5 k30ewr5.pdf
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ikw30n65wr5.pdf
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ikw30n60t.pdf
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ikw30n65el5.pdf
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