Справочник IGBT. IKW30N100T

 

IKW30N100T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IKW30N100T
   Тип транзистора: IGBT + Diode
   Маркировка: K30T100
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 412 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1000 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 98 pF
   Qgⓘ - Общий заряд затвора, typ: 217 nC
   Тип корпуса: TO247

 Аналог (замена) для IKW30N100T

 

 

IKW30N100T Datasheet (PDF)

 ..1. Size:868K  infineon
ikw30n100t 1 1.pdf

IKW30N100T
IKW30N100T

IKW30N100TTrenchStop seriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diodeC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Des

 ..2. Size:813K  infineon
ikw30n100t.pdf

IKW30N100T
IKW30N100T

IKW30N100TTrenchStop seriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diodeC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Des

 8.1. Size:2196K  infineon
ikw30n65h5.pdf

IKW30N100T
IKW30N100T

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW30N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 8.2. Size:2093K  infineon
ikw30n65nl5.pdf

IKW30N100T
IKW30N100T

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFe

 8.3. Size:1541K  infineon
ikw30n60dtp.pdf

IKW30N100T
IKW30N100T

IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW30N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW30N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losses

 8.4. Size:1976K  infineon
aikw30n60ct.pdf

IKW30N100T
IKW30N100T

AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 8.5. Size:1641K  infineon
ikw30n60h3 rev1 2g.pdf

IKW30N100T
IKW30N100T

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW30N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TREN

 8.6. Size:899K  infineon
ikw30n60trev2 3g.pdf

IKW30N100T
IKW30N100T

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi

 8.7. Size:1908K  infineon
ikw30n65wr5 k30ewr5.pdf

IKW30N100T
IKW30N100T

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 8.8. Size:1908K  infineon
ikw30n65wr5.pdf

IKW30N100T
IKW30N100T

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 8.9. Size:1921K  infineon
ikw30n65es5.pdf

IKW30N100T
IKW30N100T

IGBTTRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diodeIKW30N65ES5650V TRENCHSTOPTM 5 high speed soft switching duopakData sheetIndustrial Power ControlIKW30N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:Hi

 8.10. Size:397K  infineon
ikw30n60t.pdf

IKW30N100T
IKW30N100T

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol

 8.11. Size:1929K  infineon
ikw30n65el5.pdf

IKW30N100T
IKW30N100T

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKW30N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeCFe

 8.12. Size:2185K  infineon
ikw30n60h3.pdf

IKW30N100T
IKW30N100T

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW30N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRE

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