IKW30N100T IGBT. Datasheet pdf. Equivalent
Type Designator: IKW30N100T
Type: IGBT + Anti-Parallel Diode
Marking Code: K30T100
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 412 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 98 pF
Qgⓘ - Total Gate Charge, typ: 217 nC
Package: TO247
IKW30N100T Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW30N100T Datasheet (PDF)
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ikw30n60t.pdf
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Datasheet: STGW50NC60W , STGW60H65F , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , MBQ40T65FDSC , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T .
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