IKW08T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW08T120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 70 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 36 pF

Encapsulados: TO247

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IKW08T120 datasheet

 ..1. Size:510K  infineon
 ikw08t120.pdf pdf_icon

IKW08T120

IKW08T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fields

 ..2. Size:366K  infineon
 ikw08t120 .pdf pdf_icon

IKW08T120

IKW08T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst

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