IKW08T120 Todos los transistores

 

IKW08T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW08T120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 70 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 23 nS
   Coesⓘ - Capacitancia de salida, typ: 36 pF
   Paquete / Cubierta: TO247
 

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IKW08T120 Datasheet (PDF)

 ..1. Size:510K  infineon
 ikw08t120.pdf pdf_icon

IKW08T120

IKW08T120TrenchStop SeriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Approx. 1.0V reduced VCE(sat)and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10sGE Designed for :- Frequency Converters- Uninterrupted Power Supply TrenchStop and Fields

 ..2. Size:366K  infineon
 ikw08t120 .pdf pdf_icon

IKW08T120

IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst

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