IKW08T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW08T120
Tipo de transistor: IGBT + Diode
Código de marcado: K08T120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 70 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 36 pF
Qgⓘ - Carga total de la puerta, typ: 53 nC
Paquete / Cubierta: TO247
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IKW08T120 Datasheet (PDF)
ikw08t120.pdf

IKW08T120TrenchStop SeriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Approx. 1.0V reduced VCE(sat)and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10sGE Designed for :- Frequency Converters- Uninterrupted Power Supply TrenchStop and Fields
ikw08t120 .pdf

IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst
Otros transistores... STGW60H65F , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IRG7S313U , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T .



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