IKW08T120 Datasheet. Specs and Replacement

Type Designator: IKW08T120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 70 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 36 pF

Package: TO247

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IKW08T120 datasheet

 ..1. Size:510K  infineon
 ikw08t120.pdf pdf_icon

IKW08T120

IKW08T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fields... See More ⇒

 ..2. Size:366K  infineon
 ikw08t120 .pdf pdf_icon

IKW08T120

IKW08T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst... See More ⇒

Specs: STGW60H65F, STGWA19NC60HD, STGWA60NC60WDR, STGWF30NC60S, STGWT38IH130D, STGY40NC60VD, STGY50NC60WD, IKW30N100T, YGW75N65F1, SKW30N60HS, IKW15T120, IKW25T120, IKW40T120, IKA06N60T, IKB06N60T, IKA10N60T, IKB10N60T

Keywords - IKW08T120 transistor spec

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