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SKW20N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKW20N60
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 179 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 107 pF
   Paquete / Cubierta: TO247

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SKW20N60 Datasheet (PDF)

 ..1. Size:469K  infineon
skw20n60.pdf

SKW20N60
SKW20N60

SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high rugged

 0.1. Size:853K  infineon
skw20n60hs.pdf

SKW20N60
SKW20N60

SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

 0.2. Size:346K  infineon
skw20n60hsg.pdf

SKW20N60
SKW20N60

SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness,

 0.3. Size:315K  infineon
skw20n60g.pdf

SKW20N60
SKW20N60

SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness,

Otros transistores... SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , FGA25N120ANTD , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 .

 

 
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